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Method and system for modeling, predicting and optimizing chemical mechanical polishing pad wear and extending pad life

机译:用于建模,预测和优化化学机械抛光垫磨损并延长抛光垫寿命的方法和系统

摘要

A computer implemented system and method for modeling, predicting and optimizing a Chemical Mechanical Polishing (CMP) system for polishing semiconductor wafers and other types of substrates used in the manufacture of integrated circuits. The method and system comprises a pad wear and conditioning model that predicts the polishing effectiveness of each sampling point on the polish pad based upon the polishing pad and substrate parameters, the pressure and speed between the wafer and the polish pad, and on the amount of polishing the point has performed in a simulated CMP hardware configuration using the CMP system recipe settings. The model determines the change in pad roughness and thickness for each sampling point on the pad. The model results are used along with wafer scale uniformity and feature scale planarity model results to optimize pad life and determining optimal recipe settings for the CMP process.
机译:一种计算机实现的系统和方法,用于对化学机械抛光(CMP)系统进行建模,预测和优化,以抛光半导体晶片和集成电路制造中使用的其他类型的基板。该方法和系统包括垫磨损和调节模型,该模型基于抛光垫和衬底参数,晶片与抛光垫之间的压力和速度以及抛光量来预测抛光垫上每个采样点的抛光效果。使用CMP系统配方设置在模拟CMP硬件配置中执行了抛光操作。该模型确定焊盘上每个采样点的焊盘粗糙度和厚度的变化。该模型结果与晶圆规模均匀性和特征规模平面性模型结果一起使用,以优化焊盘寿命并确定CMP工艺的最佳配方设置。

著录项

  • 公开/公告号US6169931B1

    专利类型

  • 公开/公告日2001-01-02

    原文格式PDF

  • 申请/专利权人 SOUTHWEST RESEARCH INSTITUTE;

    申请/专利号US19980124339

  • 发明设计人 SCOTT R. RUNNELS;

    申请日1998-07-29

  • 分类号G06F190/00;

  • 国家 US

  • 入库时间 2022-08-22 01:05:52

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