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Crystal growth method for thin films of BiSrCaCuO oxides
Crystal growth method for thin films of BiSrCaCuO oxides
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机译:BiSrCaCuO氧化物薄膜的晶体生长方法
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摘要
A crystal growth method for thin films of oxides wherein a vapor-phase deposition method is used to grow crystals for Bi2Sr2CanCun+1O6+2n oxide thin film 304, where n is an integer equal to 1 or greater, includes a first step of growing a Bi2Sr2CuO6 oxide thin film 302 to an arbitrary number of molecular layers by setting a growth environment to conditions in which oxides of bismuth alone are not formed, but intended multi-element oxide is formed, and supplying the growth environment with an excess of bismuth compared with other elements, thereby preventing deficiency of bismuth and also evaporating excess bismuth from the thin film, a second step of causing a layer 303 containing calcium atoms and copper atoms each in the amount of n/2 of the number of strontium atoms contained in the Bi2Sr2CuO6 oxide thin film to accumulate upon the Bi2Sr2CuO6 oxide thin film, and a third step of, in a state in which environmental temperature is set higher than the environmental temperature in the first step, causing the Bi2Sr2CuO6 oxide thin film 302 and the accumulated calcium atoms and copper 303 atoms to react to grow crystals for a thin film 304 of an oxide Bi2Sr2CanCun+1O6+2n, where n is an integer equal to 1 or greater.
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机译:一种氧化物薄膜的晶体生长方法,其中气相沉积方法用于生长Bi2Sr2CanCun + 1O6 + 2n氧化物薄膜304的晶体,其中n为等于1或更大的整数,该方法包括以下步骤的第一步:通过将生长环境设定为不形成仅铋的氧化物而形成预期的多元素氧化物的条件,并向生长环境提供比铋过量的Bi 2 Sr 2 CuO 6氧化物薄膜302,形成任意数量的分子层。其他元素,从而防止铋的缺乏并从薄膜中蒸发掉多余的铋,第二步是使层303所含钙原子和铜原子的含量分别为Bi2Sr2CuO6中所含锶原子数的n / 2氧化物膜积聚在Bi 2 Sr 2 CuO 6氧化物膜上,其第三步骤是在将环境温度设定为高于膜中的环境温度的状态下在第一步骤中,使Bi 2 Sr 2 CuO 6氧化物薄膜302和累积的钙原子与铜303原子反应以生长晶体Bi 2 Sr 2 CanCun + 1O 6 + 2n的薄膜304,其中n是等于或大于1的整数。
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