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Method of etching thermally grown oxide substantially selectively relative to deposited oxide
Method of etching thermally grown oxide substantially selectively relative to deposited oxide
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机译:相对于沉积氧化物基本上选择性地蚀刻热生长氧化物的方法
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摘要
The invention comprises processing deposited oxide and grown oxide materials. In one implementation, a substrate is provided to have outwardly exposed grown oxide material and having deposited oxide material. The grown oxide material is etched substantially selective relative to the deposited oxide material. In another considered aspect, a silicon surface is thermally oxidized to form substantially undoped silicon dioxide over a substrate. A substantially undoped silicon dioxide layer is chemical vapor deposited over the substrate, with at least some of the thermally grown silicon dioxide being outwardly exposed. The exposed thermally grown silicon dioxide layer is vapor etched substantially selective relative to the deposited silicon dioxide layer using an etch chemistry comprising substantially anhydrous HF and an organic primer.
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