Method and apparatus for measuring subthreshold current in a memory array

摘要

An integrated circuit (100) includes an array of memory cells (102), each memory cell coupled to a word line (220, 222, 224) and a bit line (226). The integrated circuit further includes a first external connection (202) configured to receive a variable voltage and a second external connection (210) configured to provide an operating parameter of the integrated circuit. First logic circuitry (204) is coupled to the first external connection and word lines of the array of memory cells and is configurable in one of a normal mode and a test mode in response to a first control signal. The first logic circuitry conveys the variable voltage to the array in the test mode.