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Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance
Method for manufacturing short-channel, metal-gate CMOS devices with superior hot carrier performance
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机译:具有优异的热载流子性能的短通道金属栅CMOS器件的制造方法
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摘要
In short-channel MOSFET devices with gates constructed using conventional double-diffusing techniques, damage to the silicon substrate region near the gate structure causes hot carrier effects that degrade the device performance. The inventive process described minimizes damage to the silicon substrate in the region of the metal gate structure thereby providing a MOSFET device with superior hot carrier effect performance.
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