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Ion-beam source with channeling sputterable targets and a method for channeled sputtering
Ion-beam source with channeling sputterable targets and a method for channeled sputtering
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机译:具有沟道可溅射靶的离子束源和沟道溅射的方法
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摘要
The invention provides a sputtering system which consists of an ion beam and a target of a sputterable material. A distinguishing feature of the system of the invention is that the sputtering target forms a guide channel for an ion beam and sputtered particles, so that a portion of the ions collides with the walls of the target inside a closed volume of the target and forms neutral sputterable particles impinging the object. The other part of the ions goes directly to the object and participates in an ion-assisted overcoating. Thus, the special form of the target improves efficiency of sputtering, prevents scattering and the loss of the sputterable material. The system can be realized in various embodiments. One of the embodiments provides a multiple-cell system in which each cell has an individual ion-emitting slit formed by the end of a cathode rod of one cathode plate and the opening in the second cathode plate. Tubular or plate-like channeling targets are connected to the ion slits without any gaps in the form of a geometrical extensions of the individual ion-emitting slits. Another embodiment allows adjustment in the position of the rods with respect to the targets.
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