首页> 外国专利> Three level pre-buffer voltage level shifting circuit and method

Three level pre-buffer voltage level shifting circuit and method

机译:三电平预缓冲电压电平转换电路及方法

摘要

A buffer circuit utilizes a single gate oxide pre-buffer voltage level shifting circuit on, for example, an output buffer of an I/O pad, to accommodate different I/O pad supply voltages while maintaining normal operating voltages (degradation levels) across boundaries of single gate oxide devices that form the buffer. The single gate oxide output buffer can operate at several different supply voltages. A pre-buffer voltage level shifting circuit includes a multi-supply voltage level shifting circuit having signal gate oxide devices coupled to produce a pre-buffer output signal to an output buffer. A single gate oxide cross coupled active load is coupled to the multi-supply voltage level shifting circuit and provides suitable drive voltages to at least one of cascaded buffer transistors.
机译:缓冲电路在例如I / O焊盘的输出缓冲器上利用单个栅极氧化物预缓冲电压电平转换电路,以适应不同的I / O焊盘电源电压,同时保持跨边界的正常工作电压(降级)形成缓冲器的单栅极氧化物器件的数量。单栅极氧化物输出缓冲器可以在几种不同的电源电压下工作。预缓冲器电压电平移位电路包括多电源电压电平移位电路,该多电源电压电平移位电路具有被耦合以产生到输出缓冲器的预缓冲器输出信号的信号栅极氧化物器件。单栅极氧化物交叉耦合的有源负载耦合到多电源电压电平移位电路,并且向级联的缓冲晶体管中的至少一个提供合适的驱动电压。

著录项

  • 公开/公告号US6268744B1

    专利类型

  • 公开/公告日2001-07-31

    原文格式PDF

  • 申请/专利权人 ATI INTERNATIONAL SRL;

    申请/专利号US20000609022

  • 发明设计人 OLEG DRAPKIN;GRIGORI TEMKINE;

    申请日2000-06-30

  • 分类号H03K190/185;

  • 国家 US

  • 入库时间 2022-08-22 01:03:41

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号