Process for chemical vapor deposition of tungsten onto a titanium nitride substrate surface

摘要

A process for chemical vapor deposition of blanket tungsten thin films on titanium nitride proceeds by hydrogen reduction of tungsten hexafluoride at temperatures between 200° C. and 500° C. Tungsten film nucleation is preferably facilitated by a hydrogen plasma treatment of the titanium nitride surface of the substrate. The plasma treatment may be carried out in a separate etch chamber and transferred to a tungsten CVD chamber without intervening exposure to air, or, preferably, is carried out with a low energy etch performed with the substrate mounted on a susceptor in the chamber of the tungsten CVD reactor at which the tungsten film is to be applied.