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Method of modeling IC substrate noises utilizing improved doping profile access
Method of modeling IC substrate noises utilizing improved doping profile access
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机译:利用改进的掺杂分布访问对集成电路衬底噪声建模的方法
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摘要
A method for modeling a substrate, which includes obtaining vertically discretized doping profiles in the substrate to facilitate modeling. The method includes employing substrate region names and substrate cross-section names as access keys to permit accessing of the vertically discretized doping profiles. The use of the combination of region names and substrate cross-section names as unique access keys simplifies access to doping profile information for modeling purposes and yields valuable information pertaining to the presence of p-type to n-type material transitions. The information pertaining to transitions may be employed to improve substrate modeling accuracy through the inclusion of junction capacitances with the modeling process.
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