Low-bandgap double-heterostructure InAsP/GaInAs photovoltaic converters

摘要

A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP_1−yAs_y n-layer formed with an n-type dopant, an Ga_xIn_1−xAs absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP_1−yAs_y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers.