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Thin film transistor substrate and liquid crystal display unit having a low-resistance silicon compound film
Thin film transistor substrate and liquid crystal display unit having a low-resistance silicon compound film
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机译:具有低电阻硅化合物膜的薄膜晶体管基板和液晶显示单元
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摘要
The present invention provides a thin-film transistor substrate comprising: a gate electrode 40 and a gate insulating film 41 formed on a substrate 36; a semiconductor active film 42 oppositely provided on the gate electrode via the gate insulating film; a pair of ohmic contact films 43 and 44 separately provided on the semiconductor active film; a low-resistance silicon compound film 45 ranging from the ohmic contact films to the gate insulating film so as to cover the ohmic contact films and the portions of the semiconductor active film superposing with the ohmic contact films; and a source electrode 46 and a drain electrode 48 provided on the low-resistance silicon compound film.
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