Using N ▲ under 2 ▼ HBr and the (SF ▲ under 6 ▼ or NH ▲ under 3 ▼), selective plasma etching of silicon nitride in the presence of silicon oxide or silicon

摘要

(57) method and apparatus RIE for passing this by selectively etching uniformly and silicon nitride material of the workpiece given such as a silicon wafer having a silicon oxide in close proximity to [Abstract] SiN. Inflow rate is maintained using a plasma gas having a 10sccm at least N _2, I will give a uniform etch depth for the entire workpiece. And HBr, the plasma-maintaining gas and a one or both of SF ₆ and NF ₃ further.