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METHOD FOR PRODUCING SILICON CARBIDE AND METHOD FOR DISPOSING WASTE SILICON SLUDGE

机译:碳化硅的生产方法和废硅渣的处理方法

摘要

PROBLEM TO BE SOLVED: To provide a method for producing SiC by which high purity SiC can be obtained from waste silicon sludge and which enables effective utilization of waste silicon sludge, and to provide a method for disposing waste silicon sludge.;SOLUTION: Carbon black powder in an amount of 1.5 mol is added to 1 mol of waste silicon sludge in terms of slid part, pressure formed and externally heated by an electric furnace at 950°C for 2 hours in the atmosphere. From the XRD pattern of the sample, it is observed that peaks of Si and C are large before heating while they both decrease and a peak of SiC increase after heating, which proves that SiC can be produced from waste silicon sludge.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种可以从废硅泥中获得高纯度SiC并能够有效利用废硅泥的SiC生产方法,并提供一种处理废硅泥的方法。将1.5摩尔量的粉末按滑动部分,形成的压力添加到1摩尔的废硅泥中,并通过电炉在大气中在950℃下外部加热2小时。从样品的X射线衍射图可以看出,加热前Si和C的峰较大,而加热后SiC和C的峰均减小,而加热后SiC的峰则增加,这证明可以由废硅泥产生SiC。 C)2002,日本特许厅

著录项

  • 公开/公告号JP2002255532A

    专利类型

  • 公开/公告日2002-09-11

    原文格式PDF

  • 申请/专利权人 KIN KISHUN;

    申请/专利号JP20010030253

  • 发明设计人 KIN KISHUN;

    申请日2001-02-06

  • 分类号C01B31/36;C02F11/00;

  • 国家 JP

  • 入库时间 2022-08-22 01:02:05

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