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Porous silicon luminous element and porous silicon light absorbent element and those production methods

机译:多孔硅发光元件和多孔硅吸光元件及其制造方法

摘要

PURPOSE:To perform a new development of an optically functional material of light receiving and emitting elements, etc., by forming light emitting porous silicon made of porous silicon having fine pores on a surface of a substrate made of a silicon single crystal. CONSTITUTION:A p-type Si wafer in ohmic contact (Al) with a rear surface is anodically reacted to form a porous silicon (PS) layer 3 having fine porous pores 2 on a surface of a silicon single crystalline substrate 1. Its thickness is about 40mum, and its mean diameter is about 12nm. Thus, an entirely new optically functional material such as an EL, an LED, an LD, a laser oscillator OEIC, etc., as a light emitting element, further a light receiving element, etc., is realized.
机译:目的:通过在由单晶硅制成的基板表面上形成由具有细孔的多孔硅制成的发光多孔硅,来进行光接收和发射元件等的光学功能材料的新开发。构成:与背面进行欧姆接触(Al)的p型Si晶片进行阳极反应,形成在单晶硅基板1的表面上具有细微孔2的多孔硅(PS)层3。约40mm,平均直径约12nm。因此,实现了全新的光学功能材料,例如EL,LED,LD,激光振荡器OEIC等,作为发光元件,还作为光接收元件等。

著录项

  • 公开/公告号JP3306077B2

    专利类型

  • 公开/公告日2002-07-24

    原文格式PDF

  • 申请/专利权人 科学技術振興事業団;

    申请/专利号JP19910198668

  • 发明设计人 越田 信義;

    申请日1991-07-13

  • 分类号H01L33/00;H01L21/306;H01L27/15;H01L31/0248;H01L31/10;

  • 国家 JP

  • 入库时间 2022-08-22 01:00:57

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