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Pure manner of substrate for luminous element, production manner of luminous element and purifying train null of substrate for luminous element

机译:发光元件用基板的纯净方式,发光元件的生产方式以及发光元件用基板的净化系列

摘要

PROBLEM TO BE SOLVED: To completely remove carbon components attaching to the surface of a substrate for a light emitting element to form a clean surface by removing an oxide film formed by bringing an oxidizing atmosphere having a strong oxidizing power into contact with the surface of the substrate in a reducing atmosphere. ;SOLUTION: By forming an oxide film 23 on the surface of a ZnSe substrate 21 by bringing an oxidizing atmosphere having a stronger oxidizing power than oxygen into contact with the surface of the ZnSe substrate 21, carbon components attaching to the surface of the substrate are changed into CO2, CO to be removed from the surface. Then, the oxide film 23 is removed by an H2 radical treatment to obtain a clean ZnSe substrate 21. On the clean ZnSe substrate 21, an n-type buffer layer 22, an n-type clad layer 23, an n- or p-type active layer 24, a p-type clad layer 25, and a p-type contact layer 26 are epitaxially grown. Then, an n-type electrode 27 and a p-type electrode 28 are formed on both sides of the substrate to complete a light emitting element. By this method, not only oxygen components but also carbon components attaching to the surface of a substrate for a light emitting element can be removed and thereby the generation of defects of an epitaxial growth film formed on the surface of the substrate for a light emitting element can be prevented.;COPYRIGHT: (C)2000,JPO
机译:解决的问题:通过去除使具有强氧化能力的氧化性气氛与氧化硅表面接触而形成的氧化膜,从而完全去除附着在发光元件用基板的表面上的碳成分,从而形成清洁的表面。底物在还原气氛中。 ;解决方案:通过使具有比氧气强的氧化能力的氧化气氛在ZnSe衬底21的表面上形成氧化膜23,使附着在衬底表面上的碳组分成为ZnSe衬底21的表面。变成CO2,将CO从表面去除。然后,通过H 2自由基处理去除氧化膜23以获得干净的ZnSe衬底21。在干净的ZnSe衬底21上,n型缓冲层22,n型覆盖层23,n-或p-层。外延生长p型有源层24,p型覆盖层25和p型接触层26。然后,在基板的两侧上形成n型电极27和p型电极28以完成发光元件。通过这种方法,不仅可以除去附着在发光元件用基板的表面上的氧成分,还可以除去附着在碳成分上的碳成分,从而可以形成在发光元件用基板的表面上形成的外延生长膜的缺陷。可以防止。;版权:(C)2000,JPO

著录项

  • 公开/公告号JP3285014B2

    专利类型

  • 公开/公告日2002-05-27

    原文格式PDF

  • 申请/专利权人 住友電気工業株式会社;

    申请/专利号JP19990224374

  • 发明设计人 中村 孝夫;

    申请日1999-07-01

  • 分类号H01L33/00;H01L21/304;

  • 国家 JP

  • 入库时间 2022-08-22 01:00:50

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