首页> 外国专利> MAGNETORESISTANCE EFFECT ELEMENT, MAGNETORESISTANCE EFFECT HEAD, MAGNETIC RECORDING REPRODUCING DEVICE AND PRODUCTION OF MAGNETORESISTANCE EFFECT HEAD

MAGNETORESISTANCE EFFECT ELEMENT, MAGNETORESISTANCE EFFECT HEAD, MAGNETIC RECORDING REPRODUCING DEVICE AND PRODUCTION OF MAGNETORESISTANCE EFFECT HEAD

机译:磁阻效应元件,磁阻效应头,磁记录再现装置和磁阻效应头的生产

摘要

PROBLEM TO BE SOLVED: To decrease crosstalk while keeping ohmic contact by processing a magnetic film into the track width which responds to an external magnetic field of the two magnetic films interposing a nonmagnetic film and producing electric contact with a lead in a region out of the track width. SOLUTION: An antiferromagnetic film 11 such as FeMn, a lower magnetic film 12 such as NiFe, a nonmagnetic film 13 such as Cu, an upper magnetic film 14 such as NiFe, and a protective film 15 such as Ti and SiO2 are formed on a substrate 10. A part of the nonmagnetic film 13, upper magnetic film 14, protective film 15 and lower magnetic film 12 is removed by etching in the region except for the active region A. Then a lead 16 such as Cu/Cr is formed on the nonmagnetic film 12 in the region removed by etching except for the active region A. Since the magnetization of the lower magnetic film 12 is fixed by the antiferromagnetic film 11, the active region A of the magnetoresistance effect element is strictly restricted. Since no information is detected in the contact region B, this region can be made large.
机译:解决的问题:通过将磁膜加工成磁道宽度来减少串扰,同时保持欧姆接触,该磁道宽度对插入非磁膜的两个磁膜的外部磁场产生响应,并在引线外的区域与引线产生电接触轨道宽度。解决方案:在铁板上形成反铁磁膜11(例如FeMn),下磁性膜12(例如NiFe),非磁性膜13(例如Cu),上磁性膜14(例如NiFe)以及保护膜15(例如Ti和SiO2)。在基板10上,在除有源区域A以外的区域中,通过蚀刻除去非磁性膜13的一部分,上磁性膜14,保护膜15和下磁性膜12。然后,在其上形成Cu / Cr等引线16。非磁性膜12是通过蚀刻除去的,除有源区域A以外的区域。由于下磁性膜12的磁化由反铁磁性膜11固定,因此磁阻效应元件的有源区域A受到严格限制。由于在接触区域B中没有检测到信息,因此可以将该区域做大。

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