首页> 外国专利> METHOD OF COMPUTING ABSORBED-ENERGY DISTRIBUTION OF CHARGED-BEAM EXPOSURE, SIMULATOR, CHARGED-BEAM EXPOSURE METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MASK AND RECORDING MEDIUM FOR RECORDING PROGRAM FOR COMPUTATION OF ABSORBED- ENERGY DISTRIBUTION OF CHARGED-BEAM EXPOSURE

METHOD OF COMPUTING ABSORBED-ENERGY DISTRIBUTION OF CHARGED-BEAM EXPOSURE, SIMULATOR, CHARGED-BEAM EXPOSURE METHOD, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND MASK AND RECORDING MEDIUM FOR RECORDING PROGRAM FOR COMPUTATION OF ABSORBED- ENERGY DISTRIBUTION OF CHARGED-BEAM EXPOSURE

机译:带电束曝光的能量吸收分布的计算方法,模拟器,带电束曝光方法,半导体设备和面罩的制造方法以及记录程序的记录介质,用于计算吸收的能量分布

摘要

PROBLEM TO BE SOLVED: To provide a method of computing the absorbed-energy distribution of charged beams, by which process prediction having high accuracy in charged-beam exposure is realized.;SOLUTION: The irradiation conditions of a plurality of substances constituting an irradiated substrate and charged beams are input, and the first substance is specified from the substances. Monte Carlo computing method is conducted when there is only the first substance, and the first energy distribution in the first substance is obtained. When this distribution is functionally approximated, the first scattering parameter can be computed accurately. Monte Carlo computing method is conducted regarding the irradiated substrate, and the second energy distribution in the first substance is obtained. When a third energy distribution is obtained by subtracting the first distribution from the second distribution, and functionally approximating the third distribution, the second scattering parameter can also be computed accurately.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种计算带电束的吸收能量分布的方法,通过该方法,可以实现对带电束曝光具有高精度的过程预测。;解决方案:构成被照射基板的多种物质的照射条件输入带电束,并从物质中指定第一个物质。当仅存在第一物质时进行蒙特卡罗计算方法,并获得第一物质中的第一能量分布。在功能上对该分布进行近似估计时,可以准确地计算出第一散射参数。对被照射的基板进行蒙特卡罗计算法,求出第一物质中的第二能量分布。当通过从第二个分布中减去第一个分布并在功能上近似第三个分布而获得第三个能量分布时,也可以精确地计算第二个散射参数。;版权所有:(C)2002,JPO

著录项

  • 公开/公告号JP2002075818A

    专利类型

  • 公开/公告日2002-03-15

    原文格式PDF

  • 申请/专利权人 TOSHIBA CORP;

    申请/专利号JP20000254307

  • 发明设计人 NAKASUGI TETSUO;

    申请日2000-08-24

  • 分类号H01L21/027;G03F7/20;

  • 国家 JP

  • 入库时间 2022-08-22 00:58:40

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号