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METHOD FOR DECREASING PROBLEMS RELATED TO RECESSED PLANE FORMATION DURING TRENCH INSULATING STRUCTURE FORMATION

机译:减少沟槽绝缘结构形成过程中与后平面形成有关的问题的方法

摘要

PROBLEM TO BE SOLVED: To fabricate a trench insulating structure having substantially flat surface.;SOLUTION: A void (14) of a trench (4) is filled with a silicon film, and the silicon film is polished as deposited or after oxidizing, thereby, forming a trench insulating structure having a flat upper surface.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:制造具有基本平坦表面的沟槽绝缘结构。解决方案:沟槽(4)的空隙(14)填充有硅膜,并在沉积或氧化后对硅膜进行抛光,从而,形成具有平坦上表面的沟槽绝缘结构。;版权所有:(C)2002,JPO

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