EXTRACTION METHOD AND EXTRACTION DEVICE FOR IMPURITY DENSITY DISTRIBUTION WITHIN SEMICONDUCTOR SUBSTRATE AND EXTRACTION PROGRAM RECORDING MEDIUM

摘要

PROBLEM TO BE SOLVED: To easily execute the extraction of impurity density distribution at a high speed from the electric characteristics of a MOS FET at the time of extracting the impurity density distribution in the horizontal direction of the channel surface of the MOS FET.;SOLUTION: By using actually measured data for which thresholds to a plurality of the MOS FETs of different gate lengths manufactured under the same process condition are actually measured and the analysis model of the threshold of the MOS FET, the impurity density distribution within the substrate of the channel surface of the MOS FET is calculated.;COPYRIGHT: (C)2002,JPO