首页> 外国专利> OVERCURRENT PROTECTION ELEMENT, SEMICONDUCTOR FURNISHED WITH THE SAME AND MANUFACTURING METHOD OF THE OVERCURRENT PROTECTION ELEMENT

OVERCURRENT PROTECTION ELEMENT, SEMICONDUCTOR FURNISHED WITH THE SAME AND MANUFACTURING METHOD OF THE OVERCURRENT PROTECTION ELEMENT

机译:过电流保护元件,具有相同功能的半导体和过电流保护元件的制造方法

摘要

PROBLEM TO BE SOLVED: To provide an overcurrent protection element which enables a fuse body to fully exhibit its function by suppressing heat radiation in the fuse body.;SOLUTION: The overcurrent protection element, provided with a substrate 13, an insulation layer 14 formed on the substrate 13, and a fuse body 15 having a blowout part 16 for blowing out with heat, has the substrate 13, the insulation layer 14, and the fuse body 15 which is resin-packaged with packaging resin. The fuse body 15 is covered with a heat-condition suppressant body 17 of low thermal conductivity, at least over the whole periphery of the blowout part 16.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种过电流保护元件,该过电流保护元件通过抑制熔丝主体中的热辐射而使熔丝主体充分发挥其功能。解决方案:该过电流保护元件设有基板13,在其上形成的绝缘层14。基板13,具有具有用于将其吹出的吹出部16的熔断器主体15,具有基板13,绝缘层14,以及用封装树脂进行树脂封装的熔断器主体15。熔断器主体15至少在熔断部16的整个周边上覆盖有低热导率的热状态抑制器主体17;版权所有:(C)2002,JPO

著录项

  • 公开/公告号JP2002025419A

    专利类型

  • 公开/公告日2002-01-25

    原文格式PDF

  • 申请/专利权人 ROHM CO LTD;

    申请/专利号JP20000211072

  • 发明设计人 MAEDA MASAHIDE;MATSUOKA YASUFUMI;

    申请日2000-07-12

  • 分类号H01H85/02;H01H85/044;H01H85/17;

  • 国家 JP

  • 入库时间 2022-08-22 00:58:07

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