MASK FOR X-RAY LITHOGRAPHY WITH HIGHLY ACCURATE INTEGRATED CIRCUIT PATTERN FORMED ON X-RAY ABSORPTION BODY

摘要

PROBLEM TO BE SOLVED: To provide a mask for lithography with high accuracy which can prevent displacement in a high integration circuit of a semiconductor device.;SOLUTION: This mask for X-ray lithography comprises an Si frame, an artificial diamond film as a membrane laminated in order on the upper surface thereof, an antireflection film, an X-ray absorption body, and an etching mask. In this case, the reflection preventive film is formed of a platinum group metal film having a highly oriented crystal face structure in which the maximum peak (h) of a specified crystal face in an X-ray diffraction pattern satisfies the equation, w/h=0.8 or smaller (where (w) is a peak width (half-value breadth) at a half of total height of the maximum peak), when the reflection preventive film is measured from its upper surface by using an X-ray diffraction equipment.;COPYRIGHT: (C)2002,JPO