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MASK FOR X-RAY LITHOGRAPHY WITH HIGHLY PRECISION INTEGRATED CIRCUIT PATTERN FORMED ON X-RAY ABSORBING BODY
MASK FOR X-RAY LITHOGRAPHY WITH HIGHLY PRECISION INTEGRATED CIRCUIT PATTERN FORMED ON X-RAY ABSORBING BODY
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机译:具有X射线吸收体的高精度集成电路图案的X射线光刻技术的面罩
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摘要
PROBLEM TO BE SOLVED: To provide a mask for lithography with high accuracy which can prevent displacement in a highly integrated circuit for a semiconductor device.;SOLUTION: This mask for X-ray lithography comprises an Si frame, an artificial diamond film as a membrane laminated in the order on the upper surface thereof, an antireflection film, an X-ray absorption body, and an etching mask. It this case, a platinum group metal film having a highly oriented crystal face structure, in which the maximum peak (h) of a specified crystal face in an X-ray diffraction pattern satisfies the equation w/h=0.8 or smaller (where (w) is the peak width (half value breadth) at half the total height of the maximum peak), when the antireflection film is measured from its upper surface by using an X-ray diffraction equipment, is interposed between the antireflection film and X-ray absorption body.;COPYRIGHT: (C)2002,JPO
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机译:解决的问题:提供一种用于光刻的掩模,该掩模可以防止半导体器件的高度集成电路中的位移,并且具有高精度;解决方案:该X射线光刻的掩模包括Si框架,人造金刚石膜作为膜在其上表面上依次层叠有抗反射膜,X射线吸收体和蚀刻掩模。在这种情况下,具有高度取向的晶面结构的铂族金属膜,其中在X射线衍射图中指定晶面的最大峰(h)满足方程w / h = 0.8或更小(其中( w)是通过X射线衍射设备从其上表面测量减反射膜时在减反射膜和X-之间插入的峰宽(半峰宽的一半)射线吸收体。;版权所有:(C)2002,日本特许厅
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