首页> 外国专利> Method and apparatus for continuously forming a functional deposited film with a large area by the microwave plasma CVD method

Method and apparatus for continuously forming a functional deposited film with a large area by the microwave plasma CVD method

机译:通过微波等离子体CVD法连续形成大面积的功能性沉积膜的方法和装置

摘要

PURPOSE: To generate microwave plasma almost uniformly over large area and volume, by protruding a microwave applicator into a film forming chamber, in the state that the applicator is included in a microwave transmitting member, and does not come into contact with the inner peripheral wall of the member. ;CONSTITUTION: A microwave applicator 108 is isolated from a microwave plasma region 113 by a plasma control means 120 and an isolation means 109. The microwave plasma region 113 is confined in a film forming chamber whose side wall is constituted of the bent part of a belt type member 101. A bias voltage generated by a power supply 118 for applying a bias voltage is applied to a bias voltage applying pipe 112 serving as a gas introducing pipe, via a lead wire 119. The bias voltage applying pipe 112 serving as the gas introducing pipe is insulated and isolated from a gas feeding pipe 17 via an insulative joint 116.;COPYRIGHT: (C)1994,JPO&Japio
机译:目的:通过在微波辐射器包含在微波传输器中且不与内周壁接触的状态下,将微波辐射器伸入成膜室内,从而在大面积和大体积上几乎均匀地产生微波等离子体。成员的。组成:微波施加器108通过等离子体控制装置120和隔离装置109与微波等离子体区域113隔离。微波等离子体区域113被限制在成膜室中,该成膜室的侧壁由容器的弯曲部分构成。带式部件101。由电源118产生的用于施加偏置电压的偏置电压经由引线119被施加到用作气体引入管的偏置电压施加管112。气体引入管通过绝缘接头116与气体供给管17绝缘并隔离。版权所有:(C)1994,日本特许厅&日本apio

著录项

  • 公开/公告号JP3235896B2

    专利类型

  • 公开/公告日2001-12-04

    原文格式PDF

  • 申请/专利权人 キヤノン株式会社;

    申请/专利号JP19930051320

  • 发明设计人 金井 正博;

    申请日1993-02-18

  • 分类号H01L21/205;C23C16/511;H01L21/31;

  • 国家 JP

  • 入库时间 2022-08-22 00:57:17

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