首页> 外国专利> METHOD FOR PRODUCING MULTIPLE OXIDE-BASED SINGLE CRYSTAL FILM, AND MULTIPLE OXIDE-BASED SINGLE CRYSTAL FILM PRODUCED BY THE METHOD

METHOD FOR PRODUCING MULTIPLE OXIDE-BASED SINGLE CRYSTAL FILM, AND MULTIPLE OXIDE-BASED SINGLE CRYSTAL FILM PRODUCED BY THE METHOD

机译:制备基于多氧化物的单晶膜的方法以及由该方法制备的基于多氧化物的单晶膜

摘要

PROBLEM TO BE SOLVED: To provide a method of producing a multiple oxide-based single crystal film, by which the single crystal film capable of being used as an electronic device and almost free from defects in the combination of various kinds of substrates and a melt, and to provide the multiple oxide-based single crystal film produced by the method.;SOLUTION: The single crystal film is produced by combining the liquid phase epitaxy action by a single crystal substrate 5, the action caused by control of crystal growth orientation by temperature gradient of a liquid phase-solid phase interface 10 and the action caused by movement of the liquid phase-solid phase interface 10 and control of wettability of the single crystal substrate 5 and the liquid phase.;COPYRIGHT: (C)2002,JPO
机译:解决的问题:提供一种制造基于多氧化物的单晶膜的方法,通过该方法,该单晶膜能够用作电子器件并且在各种基板和熔体的组合中几乎没有缺陷。 ;并提供通过该方法生产的基于氧化物的单晶膜。;解决方案:通过结合单晶衬底5的液相外延作用,通过控制晶体生长取向引起的作用来生产单晶膜。 -液相-固相​​界面10的温度梯度和由液相-固相​​界面10的运动引起的作用以及对单晶衬底5和液相的润湿性的控制。;版权所有:(C)2002,JPO

著录项

  • 公开/公告号JP2002121098A

    专利类型

  • 公开/公告日2002-04-23

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE & TECHNOLOGY CORP;

    申请/专利号JP20000308973

  • 发明设计人 YASUDA TAKASHI;TOUCHI MASAKICHI;

    申请日2000-10-10

  • 分类号C30B29/22;C30B19/10;H01L39/24;

  • 国家 JP

  • 入库时间 2022-08-22 00:56:41

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