DOPED ZIRCONIA OR ZIRCONIA-LIKE DIELECTRIC FILM TRANSISTOR STRUCTURE, AND METHOD OF DEPOSITING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a high-k dielectric material, having electron affinity whose electrical characteristics are controlled by further adding elements to an existing high-k dielectric material. SOLUTION: This thin film has high dielectric constant with respect to silicon dioxide and is a high dielectric constant film formed by containing a) doping metal, b) metal selected from among a group consisting of zirconium(Zr) and hafnium(Hf) and c) oxygen.