METHOD FOR FORMING TRANSISTOR GATE DIELECTRIC HAVING HIGH DIELECTRIC CONSTANT REGION AND LOW DIELECTRIC CONSTANT REGION

摘要

PROBLEM TO BE SOLVED: To provide a method for forming a transistor gate dielectric, having the combination of a high dielectric constant region and a low dielectric constant region.;SOLUTION: The method for forming the transistor gate dielectric is provided with a process (a) for forming a dummy layer over a semiconductor structure, patterning the dummy layer and forming a gate opening; turning the bottom part of the gate opening to the upper surface of the semiconductor structure at the time; a process (b) of forming the dielectric layer of the high dielectric constant on the bottom part and sidewall of the dummy dielectric layer and forming the dielectric layer of the low dielectric constant on the dielectric layer of the high dielectric constant; a process (c) of forming a spacer on the sidewall of the gate opening; a process (d) of etching the dielectric layer of the low dielectric constant at a part which is not covered with the spacer; a process (e) of removing the spacer and the process (f) of forming a gate electrode on the dielectric layer of the high dielectric constant and the dielectric layer of the low dielectric constant in the gate opening.;COPYRIGHT: (C)2002,JPO