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TERTIARY AMYLIMIDETRIS(DIMETHYLAMIDE)TANTALUM, METHOD FOR PRODUCING IT, AND RAW MATERIAL SOLUTION FOR MOCVD AND METHOD FOR FORMING TANTALUM NITRIDE FILM THEREWITH
TERTIARY AMYLIMIDETRIS(DIMETHYLAMIDE)TANTALUM, METHOD FOR PRODUCING IT, AND RAW MATERIAL SOLUTION FOR MOCVD AND METHOD FOR FORMING TANTALUM NITRIDE FILM THEREWITH
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机译:叔酰亚胺亚胺(二甲胺)钽,其制备方法以及用于MOCVD的原料溶液及其形成氮化钽膜的方法
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摘要
PROBLEM TO BE SOLVED: To provide a stable compound with a vapor pressure an order higher than that of Ta(NtBu)(NEt2)3 as a raw material for forming TaN thin film as a barrier film by CVD, and a method for forming the TaN film therewith.;SOLUTION: Novel tertiary amylimidetris(dimethylamide)tantalum, Ta(NtAm)(NMe2)3, has its vapor pressure of 1 Torr/80°C and melting point of 36°C. This compound is obtained by reacting 1 mol of TaCl5, 4 mol of LiNMe2, and 1 mol of LiNHtAm in an organic solvent at around room temperature, being separated by filtration, distilling away the solvent, and being vacuum distilled. A cubic TaN film can be formed on a SiO2/Si substrate by CVD of 0.05 Torr, 550°C with this compound as a raw material.;COPYRIGHT: (C)2002,JPO
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机译:解决的问题:提供一种蒸气压比Ta(NtBu)(NEt2)3更高的稳定压力的化合物,该原料作为通过CVD形成TaN薄膜作为阻挡膜的原料,以及形成该化合物的方法解决方案:新颖的叔戊酰胺三(二甲基酰胺)钽,Ta(NtAm)(NMe2)3,其蒸气压为1 Tor / 8℃,熔点为36℃。通过使约1摩尔的TaCl 5,约4摩尔的LiNMe 2和约1摩尔的LiNHtAm在室温下在有机溶剂中反应,通过过滤分离,蒸馏除去溶剂并真空蒸馏,来获得该化合物。以该化合物为原料,通过在0.05Torr,550°C的CVD上在SiO2 / Si衬底上形成立方TaN膜.COPYRIGHT:(C)2002,JPO
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