CORRECTION FOR WAFER TEMPERATURE DRIFT IN PLASMA REACTOR BASED ON CONTINUOUS WAFER TEMPERATURE MEASUREMENT USING IN-SITU WAFER TEMPERATURE OPTICAL PROBE

摘要

PROBLEM TO BE SOLVED: To provide a method and device by which the plasma processing of a semiconductor wafer can be controlled precisely.;SOLUTION: This method solves the problem of continuously monitoring wafer temperature during treatment, using an optical or fluororescevce optical temperature sensor, including an optical fiber having an end next to and facing the backside of the wafer. The optical fiber is accommodated, without having to disturb plasma treatment by providing an axial void, through which the optical fiber passes in one of wafer lift pins. The end of the fiber facing the wafer backside coincides with the end of the hollow wafer lift pin. The other end is coupled to temperature probe electronics on the outside of the reactor chamber via an 'external' optical fiber.;COPYRIGHT: (C)2001,JPO