CORRECTION OF WAFER TEMPERATURE DRIFT IN PLASMA REACTOR BASED ON CONTINUOUS WAFER TEMPERATURE MEASUREMENT USING IN-SITU WAFER TEMPERATURE OPTICAL PROBE

摘要

PROBLEM TO BE SOLVED: To provide a method and apparatus for precision-controlling plasma treatment of a semiconductor wafer.;SOLUTION: The invention solves the problem of continuously monitoring wafer temperature during processing by using an optical temperature sensor or a fluoro-optical temperature sensor including an optical fiber having an end next to and facing the backside of the wafer. The optical fiber is accommodated without disturbing plasma processing by providing, in one of wafer lift pins, an axial void through which the optical fiber passes. The end of the fiber facing the backside of the wafer is coincident with the end of the hollow lift pin. The other end is coupled via an "external" optical fiber to a temperature probe electronic device external to a reactor chamber.;COPYRIGHT: (C)2011,JPO&INPIT