PLASMA ETCHING METHOD, MANUFACTURING OF ELECTRONIC DEVICE, PLASMA ETCHING DEVICE AND PLASMA PROCESSOR

摘要

PROBLEM TO BE SOLVED: To provide an in-situ process control method which can improve the reproducibility and the work precision of an etching process, and to provide a manufacturing method realizing the method and the manufacturing method of a semiconductor device.;SOLUTION: A process model storage part storing a process model showing a relation between plural types of process variables showing the state of work and plural types of control variables showing a plasma generation state, a measuring unit 102 measuring plural types of process variables, a calculation part 104 calculating the desired control variable value in accordance with the process model stored in the process model storage part based on the plural types of process variables measured by the measuring part, and a control unit 102 for controlling a plasma generation condition based on the desired control variable calculated by the calculation part, are installed.;COPYRIGHT: (C)2002,JPO