首页> 外国专利> QUANTUM SIZE EFFECT MICRO ELECTRON GUN AND PLANE DISPLAY DEVICE USING THE SAME, PRODUCTION METHOD OF PLANE DISPLAY

QUANTUM SIZE EFFECT MICRO ELECTRON GUN AND PLANE DISPLAY DEVICE USING THE SAME, PRODUCTION METHOD OF PLANE DISPLAY

机译:相同尺寸的量子效应微电子枪和平面显示器的制造方法,平面显示器的制作方法

摘要

PROBLEM TO BE SOLVED: To provide a quantum size effect micro electron gun capable of easily drawing electrons from a semiconductor by which can be arranged at every pixels, and to provide a thin image display device having high quantum efficiency, high brightness by utilizing the electron gun, as well as its production.;SOLUTION: Conductive electrons in a n-type semiconductor substrate 2 are accelerated in a layer 4 of quantum size effect particulates 3 laminated on the surface of the n-type semiconductor substrate 2 by an electric field, without being subjected to phonon scattering. When arriving an electrode 5, they can be released into a vacuum with greater energy than the working function of the electrode 5. The quantum size effect particulates 3 have the surfaces provided with nano-order semiconductor microcrystals having sufficiently discrete energy level of electrons to cause no phonon scattering and insulators having thicknesses enough to permit the tunneling of the electrons.;COPYRIGHT: (C)2001,JPO
机译:解决的问题:提供一种量子尺寸效应微电子枪,该电子枪能够容易地从可以在每个像素处布置的半导体中汲取电子,并且通过利用电子来提供具有高量子效率,高亮度的薄图像显示装置。解决方案:n型半导体衬底2中的导电电子在电场作用下层叠在n型半导体衬底2的表面上的量子尺寸效应颗粒3层4中被加速,不会受到声子散射。当到达电极5时,它们可以以比电极5的功函数更大的能量释放到真空中。量子尺寸效应颗粒3的表面配有纳米级半导体微晶,其电子能级足够离散,从而导致没有声子散射,绝缘子的厚度足以允许电子隧穿。;版权所有:(C)2001,JPO

著录项

  • 公开/公告号JP2001332168A

    专利类型

  • 公开/公告日2001-11-30

    原文格式PDF

  • 申请/专利权人 JAPAN SCIENCE & TECHNOLOGY CORP;

    申请/专利号JP20000151448

  • 申请日2000-05-23

  • 分类号H01J1/312;H01J9/02;H01J29/04;H01J31/12;H01L21/203;H01L21/205;H01L29/66;

  • 国家 JP

  • 入库时间 2022-08-22 00:53:30

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