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Semiconductor device with reduced line-to-line capacitance and cross talk noise
Semiconductor device with reduced line-to-line capacitance and cross talk noise
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机译:具有减小的线间电容和串扰噪声的半导体器件
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摘要
A transistor device is disclosed, having an insulating material disposed between the gate electrode and the drain and source lines, wherein the dielectric constant of the insulating material is 3.5 or less. Accordingly, the capacitance between the gate electrode and the drain and source lines can be reduced, thereby improving signal performance of the field effect transistor with decreased cross talk noise.
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