首页> 外国专利> CIRCUIT TOPOLOGY FOR BETTER SUPPLY IMMUNITY IN A CASCADED GM/GM AMPLIFIER

CIRCUIT TOPOLOGY FOR BETTER SUPPLY IMMUNITY IN A CASCADED GM/GM AMPLIFIER

机译:层叠的GM / GM放大器中的电路拓扑可提高供应免疫力

摘要

There is disclosed an amplifier comprising: 1) a plurality of cascaded NMOS differential amplifier stages, wherein a first one of the plurality of cascaded NMOS differential amplifier stages is coupled to at least one input signal; 2) a PMOS differential amplifier stage having a first input coupled to a first NMOS differential output of a last one of the plurality of cascaded NMOS differential amplifier stages and a second input coupled to a second NMOS differential output of the last cascaded NMOS differential amplifier stage, wherein the PMOS differential amplifier comprises a first diode-connected PMOS load transistor having a gate and a drain connected to ground and a second diode-connected PMOS load transistor having a gate and a drain connected to ground; and 3) an output differential amplifier stage comprising: a) load transistors comprising a third PMOS transistor having a gate and a drain connected together and a source connected to a power supply rail and a fourth PMOS transistor having a gate coupled to the third PMOS transistor gate and a source connected to the power supply rail; and b) a differential transistor pair comprising a first NMOS transistor having a gate coupled to a source of the first diode-connected PMOS load transistor and a drain coupled to a drain of the third PMOS transistor and a second NMOS transistor having a gate coupled to a source of the second diode-connected PMOS load transistor and a drain coupled to a drain of the fourth PMOS transistor.
机译:公开了一种放大器,包括:1)多个级联的NMOS差分放大器级,其中,所述多个级联的NMOS差分放大器级中的第一个耦合到至少一个输入信号;以及2)PMOS差分放大器级,其第一输入耦合到多个级联NMOS差分放大器级中的最后一个的第一NMOS差分输出,第二输入耦合到最后级联NMOS差分放大器级的第二NMOS差分输出,其中,PMOS差分放大器包括:第一二极管连接的PMOS负载晶体管,其栅极和漏极接地;以及第二二极管连接的PMOS负载晶体管,其栅极和漏极接地。 3)输出差分放大器级,包括:a)负载晶体管,包括第三PMOS晶体管和栅极连接到第三PMOS晶体管的第三PMOS晶体管的栅极和漏极连接在一起,源极连接到电源轨栅极和源极连接到电源轨; b)差分晶体管对,其包括第一NMOS晶体管和第二NMOS晶体管,第一NMOS晶体管的栅极耦合到第一二极管连接的PMOS负载晶体管的源极,漏极耦合到第三PMOS晶体管的漏极。第二二极管连接的PMOS负载晶体管的源极和耦合到第四PMOS晶体管的漏极的漏极。

著录项

  • 公开/公告号US2002097092A1

    专利类型

  • 公开/公告日2002-07-25

    原文格式PDF

  • 申请/专利权人 AUDE ARLO J.;

    申请/专利号US20000569829

  • 发明设计人 ARLO J. AUDE;

    申请日2000-05-12

  • 分类号H03F3/45;

  • 国家 US

  • 入库时间 2022-08-22 00:51:39

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