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Efficient AC coupled CMOS RF amplifier

机译:高效交流耦合CMOS RF放大器

摘要

Disclosed is a CMOS transistor amplifier for small RF signals which operates in a Class AB mode. The serially connected P channel and N channel transistors of the CMOS transistor pair have DC bias voltages applied to the control gates, and the small input signal is capacitively coupled to the gates of the CMOS transistor pair. In a preferred embodiment, the DC voltage bias for the P channel transistor is derived from a second P channel transistor which is approximately identical to the first P channel transistor in structure with the second P channel transistor serially connected with the current source and the voltage at the gate/drain of the transistor resistively coupled to the gate of the first P channel transistor. Similarly, the second bias circuit comprises a second N channel transistor which is approximately identical in structure to the first N channel transistor with the second N channel transistor serially connected with a current source and the bias voltage taken at the gate/drain of the second N channel transistor. The bias voltage is then applied through resistive means to the gate of the first N channel transistor.
机译:公开了一种用于小型RF信号的CMOS晶体管放大器,其以AB类模式工作。 CMOS晶体管对的串联连接的P沟道和N沟道晶体管具有施加到控制栅极的DC偏置电压,并且小输入信号电容性地耦合到CMOS晶体管对的栅极。在一个优选实施例中,用于P沟道晶体管的DC电压偏置来自第二P沟道晶体管,该第二P沟道晶体管在结构上与第一P沟道晶体管大致相同,其中第二P沟道晶体管与电流源串联,并且在晶体管的栅极/漏极电阻耦合到第一P沟道晶体管的栅极。类似地,第二偏置电路包括第二N沟道晶体管,该第二N沟道晶体管在结构上与第一N沟道晶体管大致相同,其中第二N沟道晶体管与电流源串联,并且偏置电压取自第二N沟道晶体管的栅极/漏极。沟道晶体管。然后通过电阻装置将偏置电压施加到第一N沟道晶体管的栅极。

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