Method for polysilicon conductor (PC) Trimming for shrinking critical dimension and isolated-nested offset correction

摘要

A method of forming a semiconductor device, includes providing a structure having a first critical dimension, forming a lithographic pattern on the structure, and etching the structure with an O₂-containing material to trim the first critical dimension to a second critical dimension, the second critical dimension being smaller than the first critical dimension. Thereafter, any offset between the nested features and the isolated feature can be corrected.