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Memory array architecture, method of operating a dynamic random access memory, and method of manufacturing a dynamic random access memory
Memory array architecture, method of operating a dynamic random access memory, and method of manufacturing a dynamic random access memory
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机译:存储器阵列架构,操作动态随机存取存储器的方法以及制造动态随机存取存储器的方法
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摘要
A dynamic random access memory includes a plate line; a digit line; a memory cell selectively coupled between the digit line and the plate line; sense circuitry selectively coupled to the memory cell to read the memory cell and capable of applying a first voltage from the plate line to the digit line; equilibration circuitry selectively coupling the plate line to an equilibration voltage less than the first voltage and selectively coupling the digit line to the equilibration voltage; and control circuitry configured to cause the equilibration circuitry to couple the plate line to the equilibration voltage while the memory cell is being accessed. A method of manufacturing a dynamic random access memory includes providing control circuitry configured to operate in a specified manner. A method of operating a dynamic random access memory includes turning on one equilibration transistor, while another equilibration transistor is off, so that a plate line equilibrates to a voltage defined by the equilibration voltage source during accessing of a memory cell.
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