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Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method
Method of growing a thin film in gaseous phase and apparatus for growing a thin film in gaseous phase for use in said method
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机译:在气相中生长薄膜的方法和用于该方法中的在气相中生长薄膜的设备
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摘要
An improved method of growing a thin film in gaseous phase maintaining a uniform thickness and uniform electric properties such as resistivity, etc. over the whole surface of the film, and an apparatus for growing a thin film in gaseous phase adapted to conducting the above method. A method grows the thin film in gaseous phase by flowing down a film-forming reaction gas through plural gas feed ports 1, 2 formed in the top portion of a cylindrical reactor of an apparatus for glowing a thin film in gaseous phase via flow stabilizer plates 3, and bringing the film-forming reaction gas into contact with the wafer substrate A placed on a rotary susceptor 4 disposed on the lower side thereby to grow a thin film on the surface of the substrate, wherein space formed by the inner wall at the top portion of the reactor B and the flow stabilizer plates 3 is sectionalized into plural spatial sections in a concentric manner with the center of the wafer substrate A as nearly a center point, the gas feed ports 1, 2 are arranged to be corresponded to the sections, and at least either the flow rate or the concentration (8, 9) of the film-forming reaction gas fed to any one of the sections is adjusted.
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