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Method and apparatus for growing oriented whisker arrays

机译:用于生长定向晶须阵列的方法和设备

摘要

A method for growing of oriented whisker arrays on a single-crystalline substrate consists in vapor-phase transport of the material to be crystallized from a solid-state source body of the same composition as the whiskers to the substrate coated with liquid-phase particles that serve as nucleation/catalyzing centers for the whisker growth. The source body has a plane surface that is faced to the substrate and parallel to it so that a vectorly-uniformn temperature field, whose gradient is perpendicular to both the substrate and the source, is created. The vectorly-uniform temperature field is realized by an apparatus with high-frequency heating of specially designed bodies that are arranged in a special position in respect to the high-frequency inductor. Laser and/or lamp heat sources can be also used either separately or in combinations with the high-frequency heater. In the apparatus, the material source is heated, while the substrate takes. heat from the material source. In another case, the substrate is heated, while the material source takes heat from the substrate.
机译:一种在单晶衬底上生长定向晶须阵列的方法,在于将要结晶的材料从与晶须相同组成的固态源体中气相沉积到涂有液相颗粒的衬底上,充当晶须生长的成核/催化中心。源体具有面对衬底并与其平行的平面,从而产生矢量均匀的温度场,其梯度垂直于衬底和源两者。向量均匀温度场是通过对特殊设计的本体进行高频加热的设备实现的,这些本体相对于高频感应​​器布置在特定的位置。激光和/或灯的热源也可以单独使用或与高频加热器结合使用。在该设备中,加热材料源,同时取走基材。来自材料源的热量。在另一种情况下,加热衬底,同时材料源从衬底吸收热量。

著录项

  • 公开/公告号US6451113B1

    专利类型

  • 公开/公告日2002-09-17

    原文格式PDF

  • 申请/专利权人 GIVARGIZOV EVGENY INVIEVICH;

    申请/专利号US20000569147

  • 发明设计人 EVGENY INVIEVICH GIVARGIZOV;

    申请日2000-05-11

  • 分类号C30B251/00;

  • 国家 US

  • 入库时间 2022-08-22 00:49:08

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