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Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
Copper process compatible CMOS metal-insulator-metal capacitor structure and its process flow
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机译:铜工艺兼容的CMOS金属-绝缘体-金属电容器的结构及其工艺流程
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摘要
In many mixed-signal or radio frequency Rf applications, inductors and capacitors are needed at the same time. For a high performance inductor devices, a thick metal layer is needed to increase performance, usually requiring an extra masking process. The present invention describes both a structure and method of fabricating both copper metal-insulator-metal (MIM) capacitors and thick metal inductors, simultaneously, with only one mask, for high frequency mixed-signal or Rf, CMOS applications, in a damascene and dual damascene trench/via process. High performance device structures formed by this invention include: parallel plate capacitor bottom metal (CBM) electrodes and capacitor top metal (CTM) electrodes, metal-insulator-metal (MIM) capacitors, thick inductor metal wiring, interconnects and contact vias.
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