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Semiconductor device having reduced line width variations between tightly spaced and isolated features
Semiconductor device having reduced line width variations between tightly spaced and isolated features
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机译:在紧密间隔和隔离的特征之间具有减小的线宽变化的半导体器件
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摘要
A patterned film structure within a semiconductor device includes a pattern formed within a hardmask film, and a pattern formed within an underlying semiconductor or metal film beneath the hardmask film. The etch bias of both isolated and nested features formed within the patterned structure, is substantially the same with respect to a masking film formed over the hardmask film.
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