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Semiconductor device providing overvoltage and overcurrent protection for a line

机译:半导体器件为线路提供过压和过流保护

摘要

An integrated circuit (40) providing overvoltage and overcurrent protection to a line (16). The integrated circuit (40) is constructed to provide overvoltage protection when a voltage exceeding a specified magnitude is impressed across the cathode and anode terminals (64, 66), irrespective of the gate-cathode current. A gate terminal (72) is provided to trigger the overvoltage protection device into conduction when a gate current exceeding a predefined value is carried on the line (16). The gate-cathode structure of the integrated circuit (40) includes a semiconductor resistance (74) which functions to make the gate current required for turn on higher, thereby allowing the gate-cathode terminals (64, 72) of the integrated circuit (40) too be connected in series with the line (16) to be protected.
机译:集成电路( 40 )为线路( 16 )提供过压和过流保护。集成电路( 40 )构造为在阴极和阳极端子( 64、66 )上施加超过指定幅度的电压时提供过电压保护,而与栅阴极电流。提供栅极端子( 72 ),以在线路( 16 )上传输的栅极电流超过预定值时触发过压保护器件导通。集成电路( 40 )的栅极-阴极结构包括半导体电阻( 74 ),该半导体电阻的作用是使导通所需的栅极电流更高,从而允许栅极-集成电路( 40 )的阴极端子( 64、72 )也与要保护的线路( 16 )串联连接。

著录项

  • 公开/公告号US6407901B1

    专利类型

  • 公开/公告日2002-06-18

    原文格式PDF

  • 申请/专利权人 TECCOR ELECTRONICS LP;

    申请/专利号US19990436114

  • 发明设计人 ELMER L. TURNER JR.;KELLY C. CASEY;

    申请日1999-11-08

  • 分类号H02H90/00;

  • 国家 US

  • 入库时间 2022-08-22 00:48:48

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