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Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interface
Dual layer nickel deposition using a cobalt barrier to reduce surface roughness at silicide/junction interface
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机译:使用钴阻挡层进行双层镍沉积,以降低硅化物/结界面的表面粗糙度
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摘要
A method for manufacturing a semiconductor device employing mixed metal silicide technology is disclosed. The method comprises providing a semiconductor device having a doped silicon region, such as a source/drain, sequentially layering a first metal comprising cobalt, and a second layer comprising nickel over the semiconductor device, and subjecting the device to rapid thermal annealing. The resulting device has a mixed metal silicide layer overtop the doped silicon region, wherein the mixed metal silicide layer and the doped silicon region form a smooth boundary between them.
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