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Redundancy arrangement using a focused ion beam

机译:使用聚焦离子束的冗余安排

摘要

A static redundancy arrangement for a circuit using a focused ion beam anti-fuse methodology which reduces the circuit layout area and the switching activity compared to a prior art dynamic redundancy scheme, resulting in less power, a simpler design and higher speed. Focused ion beam anti-fuse methodology is used to program redundancy for circuits, particularly wide I/O embedded DRAM macros. An anti-fuse array circuit is comprised of a plurality of anti-fuse programming elements, each of which comprises a latch circuit controlled by a set input signal, and an anti-fuse device which is programmed by a focused ion beam.
机译:与现有技术的动态冗余方案相比,使用聚焦离子束反熔丝方法的电路的静态冗余装置与现有技术的动态冗余方案相比减小了电路布局面积和开关活动,从而导致功耗更低,设计更简单,速度更高。聚焦离子束反熔丝方法用于对电路(特别是宽I / O嵌入式DRAM宏)进行冗余编程。反熔丝阵列电路包括多个反熔丝编程元件,每个反熔丝编程元件包括由设置的输入信号控制的锁存电路,以及由聚焦离子束编程的反熔丝器件。

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