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Lithography system including mechanism for setting optimal process parameters and method of operating the same

机译:包括用于设置最佳工艺参数的机构的光刻系统及其操作方法

摘要

A lithography system includes a spinner, a first controller, a stepper and a second controller. The spinner coats a photoresist film on a semiconductor substrate. The first controller sets a first optimal process parameter according to external information regarding the semiconductor wafer and controls the spinner according to the first optimal process parameter, when the semiconductor wafer is loaded into the spinner. The stepper exposes the semiconductor wafer, which is coated with the photoresist film, to light of a predetermined wavelength. The second controller sets a second optimal process parameter according to the external information regarding the semiconductor wafer and controls the stepper according to the second optimal process parameter, when the semiconductor wafer coated with the photoresist film is loaded into the stepper.
机译:光刻系统包括旋转器,第一控制器,步进器和第二控制器。旋转器在半导体衬底上涂覆光致抗蚀剂膜。当将半导体晶片装载到旋转器中时,第一控制器根据关于半导体晶片的外部信息设置第一最佳处理参数,并根据第一最佳处理参数控制旋转器。步进器使涂覆有光致抗蚀剂膜的半导体晶片暴露于预定波长的光。当将涂覆有光致抗蚀剂膜的半导体晶片装载到步进器中时,第二控制器根据关于半导体晶片的外部信息设置第二最优处理参数,并根据第二最优处理参数控制步进器。

著录项

  • 公开/公告号US6445443B1

    专利类型

  • 公开/公告日2002-09-03

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号US20000606156

  • 发明设计人 CHAN-HOON PARK;HEE-SUN CHAE;

    申请日2000-06-29

  • 分类号G03B273/20;G03D50/00;

  • 国家 US

  • 入库时间 2022-08-22 00:47:33

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