Semiconductor processing methods, methods of forming silicon dioxide methods of forming trench isolation regions, and methods of forming interlevel dielectric layers

摘要

In one aspect, the invention includes a semiconductor processing method of removing water from a material comprising silicon, oxygen and hydrogen, the method comprising maintaining the material at a temperature of at least about 100° C., more preferably at least 300° C., and at a pressure of greater than 1 atmosphere to drive water from the material. In another aspect, the invention includes a semiconductor processing method of forming SiO₂ having a wet etch removal rate of less than about 700 Angstroms/minute comprising: a) forming a layer comprising Si(OH)_x; b) maintaining the Si(OH)_x at a temperature of at least about 300° C. and at a pressure of greater than 1 atmosphere to drive water from the Si(OH)_x; and c) converting the Si(OH)_x to SiO₂, the SiO₂ having a wet etch removal rate of less than about 700 Angstroms/minute under the conditions of a buffered oxide etch utilizing 20:1 H₂O:HF, at about atmospheric pressure and at a temperature of about 30° C. In another aspect, the invention includes a method of forming a trench isolation region comprising: a) forming a trench within a substrate; b) forming a layer comprising Si(OH)_x within the trench and over the substrate; c) driving water from the layer comprising Si(OH)_x at a pressure of greater than 1 atmosphere; d) converting the Si(OH)_x to SiO₂; and e) removing at least a portion of the SiO₂.