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Hydrogen-doped polycrystalline group IV-based TFT having a larger number of monohydride-IV bonds than higher order-IV bonds
Hydrogen-doped polycrystalline group IV-based TFT having a larger number of monohydride-IV bonds than higher order-IV bonds
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机译:氢掺杂多晶IV型TFT具有比高阶IV键数量更多的一氢键-IV键
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摘要
A polycrystalline semiconductor material containing Si, Ge or SiGe, wherein the material contains H atoms and the number of monohydride structures of couplings between Si or Ge, and H is larger than the number of higher-order hydride structures, or in other words, a peak intensity of a monohydride structure in a local vibration mode measured by a Raman spectral analysis is higher than a peak intensity of a higher-order hydride structure. By configuring the compositions of a polycrystalline semiconductor material in the above manner, the carrier mobility can be made high.
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