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Dielectric gap material for magnetoresistive heads with conformal step coverage
Dielectric gap material for magnetoresistive heads with conformal step coverage
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机译:用于保形阶梯覆盖的磁阻磁头的介电间隙材料
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摘要
A silicon nitride dielectric film for use in an MR head according to the present invention comprises from about 38% to 44% by volume of Si, from about 35% to 37% by volume of N, and from about 21% to 24% by volume of H. The dielectric film is formed by plasma enhanced chemical vapor deposition (PECVD) at relatively low temperatures. A plurality of gases capable of reacting to form silicon nitride are introduced into a PECVD reactor. An electric field is generated in the reactor to produce a plasma. The gases in the reactor react in the presence of the electrical field to form a silicon nitride dielectric film.
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