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Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer
Method of making a tungsten nitride barrier layer with improved adhesion and stability using a silicon layer
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机译:使用硅层制造具有改善的粘附性和稳定性的氮化钨阻挡层的方法
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摘要
Tungsten nitride adhesion to an underlying dielectric is enhanced by forming a thin layer of silicon over the dielectric before depositing the tungsten nitride. A twenty angstrom layer of amorphous silicon is formed over a silicon oxide dielectric. Tungsten nitride is formed over the silicon layer using a plasma enhanced chemical vapor deposition with tungsten hexafluoride and nitrogen. As the tungsten nitride is formed, the tungsten hexafluorine and nitrogen reacts with the amorphous silicon to produce an adhesion layer that includes silicon nitride and tungsten silicide.
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