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Manufacturing of gate electrodes having silicon of different grain sizes and different surface roughness
Manufacturing of gate electrodes having silicon of different grain sizes and different surface roughness
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机译:具有不同晶粒尺寸和不同表面粗糙度的硅的栅电极的制造
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摘要
A gate electrode structure of a semiconductor device and a manufacturing method thereof are provided. The gate electrode structure includes a first silicon layer pattern formed of a polycrystalline silicon layer and a second silicon layer pattern having surface roughness lower than that of the first silicon layer pattern formed on the first silicon layer pattern.
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