首页> 外国专利> Cascode amplifier integrated circuit with reduced miller capacitance at an output buffer stage during a transient fall response

Cascode amplifier integrated circuit with reduced miller capacitance at an output buffer stage during a transient fall response

机译:级联放大器集成电路,在瞬态下降响应期间,输出缓冲级的米勒电容减小

摘要

A cascode amplifier integrated circuit (IC) with a relatively fast transient fall response (i.e., short transient fall response time) and, therefore, relatively fast operation. The cascode amplifier IC includes a bias input terminal configured to receive a bias potential Vb, a power supply input terminal configured to receive a power supply voltage Vcc, an input signal terminal configured to receive an input voltage signal Vin, and an output signal terminal. The cascode amplifier IC also includes a gain stage circuit with a plurality of interconnected bipolar transistors and an output buffer stage circuit configured. The cascode amplifier integrated circuit further includes a discharge circuit configured to discharge stray capacitance at a node of the output buffer stage circuit. The discharge circuit includes, for example, a bipolar discharge transistor (configured, for example, as an emitter-follower device) that reduces the Miller capacitance across the base and collector of one of the interconnected bipolar transistors of the output buffer stage circuit during a transient fall response. The discharging of the stray capacitance by the discharge circuit decreases the transient fall response time of the cascode amplifier IC and, thereby, increases its operation speed (that is, the discharge circuit provides for fast operation).
机译:具有相对快速的瞬态下降响应(即,短的瞬态下降响应时间)并且因此具有相对快速的操作的共源共栅放大器集成电路(IC)。所述共源共栅放大器IC包括被配置为接收偏置电位V b 的偏置输入端子,被配置为接收电源电压V cc 的电源输入端子,输入信号。端子被配置为接收输入电压信号V in ,以及输出信号端子。所述共源共栅放大器IC还包括具有多个互连的双极晶体管的增益级电路和配置的输出缓冲级电路。所述共源共栅放大器集成电路还包括放电电路,其被配置为在输出缓冲级电路的节点处对杂散电容进行放电。放电电路包括例如双极放电晶体管(例如,配置为发射极跟随器器件),该双极放电晶体管减小了输出缓冲级电路的互连双极晶体管之一的基极和集电极之间的米勒电容。瞬态跌落响应。放电电路对杂散电容的放电减少了共源共栅放大器IC的瞬态下降响应时间,从而提高了其工作速度(即,放电电路可提供快速工作)。

著录项

  • 公开/公告号US6353367B1

    专利类型

  • 公开/公告日2002-03-05

    原文格式PDF

  • 申请/专利权人 NATIONAL SEMICONDUCTOR CORPORATION;

    申请/专利号US20000615527

  • 发明设计人 HON KIN CHIU;

    申请日2000-07-13

  • 分类号H03F30/40;H03F13/80;H03F11/40;H03F12/40;

  • 国家 US

  • 入库时间 2022-08-22 00:46:39

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